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| SHINDENGEN Schottky Rectifiers (SBD) Dual SF30SC4 40V 30A FEATURES *oeTj150*Z OUTLINE DIMENSIONS Case : FTO-220 Unit : mm *oe PRRSM avalanche guaranteed *oe Fully Isolated Molding *oe High capacity with Small Package *oe Dielectric strength 2kV guaranteed APPLICATION *oe Switching power supply *oe DC/DC converter *oe Home Appliances, Office Equipment *oe Telecommunication RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Storage Temperature Tstg -55*150 Z * Operating Junction Temperature Tj 150 *Z Maximum Reverse Voltage V RM 40 V Repetitive Peak Surge V Pulse width 0.5ms, duty 1/40 Reverse Voltage RRSM 45 V IO Current Average Rectified Forward 50Hz sine wave, R-load, Rating for each diode Io/2, T 30 A IFSM Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1 cycle300 value, Tj= peak A Repetitive Peak Surge P Pulse width 10Es, Rating of per diode, Tj=25*Z Reverse Power RRSM 1000 W Dielectric Strength VdisTerminals to case, AC 1 minute 2 kV Mounting Torque TOR(Recommended torque* 0.3Nm) F 0.5 Nm *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Ratings nit U Forward Voltage V I =15A, Pulse measurement, Rating of per diode FF Max.0.55 V Reverse Current IR V=V M, R R Pulse measurement, Rating of Max.10mA per diode Junction Capacitance Cj f=1MHz, V Rating of per diode Typ.590 R =10V, pF Thermal Resistance AEjcunction to case j Max.2.0 *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF30SC4 Forward Voltage Forward Current IF [A] 10 Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] SF30SC4 Junction Capacitance f=1MHz Tc=25C TYP per diode Junction Capacitance Cj [pF] 1000 100 0.1 1 10 Reverse Voltage VR [V] SF30SC4 10000 Reverse Current 1000 Tc=150C [MAX] Reverse Current IR [mA] Tc=150C [TYP] 100 Tc=125C [TYP] 10 Tc=100C [TYP] Tc=75C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 30 35 40 Reverse Voltage VR [V] SF30SC4 50 Reverse Power Dissipation Reverse Power Dissipation PR [W] DC D=0.05 40 0.1 0.2 30 0.3 0.5 20 10 SIN 0.8 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150C 0 VR tp D=tp /T T SF30SC4 30 Forward Power Dissipation DC Forward Power Dissipation PF [W] 25 SIN 0.5 D=0.8 20 0.1 15 0.05 0.3 0.2 10 5 0 0 10 20 30 40 50 Average Rectified Forward Current IO [A] Tj = 150C IO 0 tp D=tp /T T SF30SC4 60 Derating Curve Average Rectified Forward Current IO [A] 50 DC D=0.8 40 0.5 30 SIN 0.3 0.2 0.1 10 0.05 20 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = 20V 0 0 IO VR tp D=tp /T T SF30SC4 400 Peak Surge Forward Capability IFSM 350 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 300 non-repetitive, sine wave, Tj=25C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SBD 120 Repetitive Surge Reverse Power Derating Curve 100 PRRSM Derating [%] 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [C] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP SBD 10 Repetitive Surge Reverse Power Capability PRRSM p) / PRRSM p=10s) Ratio (t (t 1 0.1 1 10 100 Pulse Width t p [s] IRP IR 0.5IRP 0 tp PRRSM = IRP x VRP VR VRP |
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